LOW TEMPERATURE INFRARED PHOTOCONDUCTORS.

Abstract

Research directed toward the development of an infrared sensitive solid state photoconductive multiplier is reported. The possibility of the use of amorphous Se as the insulator layer together with PbTe as the photoconductor for the multiplier has been investigated. The transport properties of this combination have been found to be rather irreproducible. Evidence is presented which suggests that the source of the difficulty is the conversion, at room temperature, of amorphous Se to the hexagonal crystalline state. This conversion appears to be catalyzed by contact between the amorphous Se and crystalline PbTe or PbSe. Because of this, amorphous Se is unsuitable as the insulator layer if the photoconductor is to be a lead chalcogenide. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 29, 1968
Accession Number
AD0670009

Entities

People

  • Melvin L. Schultz

Organizations

  • Sarnoff Corporation

Tags

DTIC Thesaurus Topics

  • Conversion
  • Dielectrics
  • Electric Conductors
  • Infrared Photoconductors
  • Low Temperature
  • Photoconductors
  • Transport Properties
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene