INVESTIGATION OF SEMICONDUCTOR SCHOTTKY BARRIERS FOR OPTICAL DETECTION AND CATHODIC EMISSION,
Abstract
A study was made of metal-semiconductor contacts, with dual emphasis on infra-red optical detection and on cathodic emission. A layered optical matching structure for increasing the efficiency of metal-semiconductor photoemissive detectors has been designed in theory. An initial experimental structure has shown sixfold efficiency improvement near 0.975 eV photon energy over a detector of conventional design. An anomalously high photoemissive yield has been observed for small-area diodes. Optical and cryogenic apparatus has been designed to permit extension of experimental work to 6 mu wavelength. A practical cathodic emission vehicle has been developed utilizing the Ag-GaP Schottky barrier. Au- and Ag-ZnS diodes have been found to have a 1.83 eV barrier height for a chemically prepared ZnS surface. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1968
- Accession Number
- AD0670183
Entities
People
- Jerome Cohen
- Juri Vilms
- Robert J. Archer