LOCAL MODE STUDIES OF LI-DEFECT COMPLEXES IN GAAS AND B-P PAIRS IN SI.
Abstract
Li-defect complexes in GaAs and B-P pairs in Si have been studied through infrared absorption spectroscopy of the associated localized vibrational modes. In Si, two infrared absorption bands attributed to B-P pairs are observed close to the isolated B band. The results are compared to the theory of Elliott and Pfeuty, and the number of pair bands, their isotope shift, and their proximity to the isolated B band are in general agreement with theory. In GaAs, bands observed after Li diffusion are identified with complexes of Li and native defects created during the diffusion process. The diffusion temperature dependence of the absorption band peaks obeys an effective activation energy expression (e exp. -E/kT), with E = 1.0eV. At least four defect complex species are present. Isotope mixture experiments show that at least one complex species contains more than one Li atom per complex. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0670867
Entities
People
- M. Levy
- Orval G. Lorimor
- Victor P. Tsvetov
- William G. Spitzer
- Worth P. Allred
Organizations
- University of Southern California