DIELECTRIC PROPERTIES OF THIN FILMS OF PRASEODYMIUM, CERIUM AND NEODYMIUM FLUORIDES (O DIELEKTRICHESKIKH SVOISTVAKH TONKIKH PLENOK FTORISTOGO PRAZEODIMA, TSERIYA I NEODIMA),
Abstract
The results are presented of an investigation of both the effective dielectric constants (epsilon sub ef) and dielectric losses of thin films of praseodymium (PrF3), cerium (CeF3), and neodymium (NdF3) fluorides. It was shown that the large values of epsilon sub ef and the dependence of dielectric losses on temperature and frequency may be explained by the presence of the barrier layers under the electrodes. The effective impurity-activation energies were determined to be: for PrF3 0.5-0.6 ev, for NdF3 and CeF3 0.8-1.1 ev. The value of the forbidden band of CeF3, determined from the absorption measurements, is 4.85 ev, while the values for PrF3 and NdF3 seem to be close to 5.9-6.4 ev. The process of aging of epsilon sub ef was investigated, and the dependence of the breakdown field was determined according to the thickness of the films. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 28, 1967
- Accession Number
- AD0670897
Entities
People
- K. P. Bertulis
- V. B. Tolutis
Organizations
- National Air and Space Intelligence Center