TRAVELING-WAVE AMPLIFICATION BY DRIFTING CARRIERS IN SEMICONDUCTORS.

Abstract

The dispersion relation for a carrier wave in a semiconductor interacting with a circuit wave is rederived and solved numerically. Limitations of the theoretical model are discussed. The conditions for maximum gain in a traveling-wave amplifier are found for a number of semiconductor materials such as germanium, silicon, gallium arsenide and indium antimonide. Several discrepancies found in an earlier work are investigated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1968
Accession Number
AD0671602

Entities

People

  • Bruno Zotter

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Carrier Waves
  • Dispersion Relations
  • Gallium Arsenides
  • Indium Antimonides
  • Materials
  • Semiconductors
  • Traveling Waves
  • Waves

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics