OXIDATION OF COPPER AT 200-900DEGREES C,

Abstract

An investigation on the oxidation of copper under an oxygen pressure of 76 mm Hg at 200-900 degrees C has been carried out. The different oxidation behaviors of copper at the different temperatures as observed are discussed in the light of surface morphology and gross defects such as cracks and cavities which may be present in the oxide layer. Moreover, on the assumption of Frank's mechanism of whisker growth, an explanation of the possibility of the presence of imperfectly structured CuO whiskers is given. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 20, 1967
Accession Number
AD0671649

Entities

People

  • Chi-hsun Lo
  • Hsun Li

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Chemical Compounds
  • Ores
  • Oxidation
  • Oxides
  • Oxygen Compounds
  • Republic

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Theoretical Analysis.
  • Thin Film Deposition Science.