INVESTIGATION OF THE GROWTH OF SINGLE CRYSTAL SIC BY THE TRAVELLING SOLVENT AND OTHER METHODS.
Abstract
The travelling heater method was used for the growth of alpha-and beta-SiC crystals in graphite crucibles. Molten chromium was used as a solvent material for the solution zone which was kept between 1650 and 1900 degrees C. Solid polycrystalline SiC ingots 0.3 cm in diameter and 2 cm in length have been obtained, with the individual crystals having a grain size of up to 1 mm. Polycrystalline ingots of alpha-and beta-SiC crystals have also been obtained by slow cooling of a molten alloy solution of Cr and SiC mixtures in graphite crucibles. SiC crystal growth from a beryllium containing solvent matrix was attempted by the travelling solvent method. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0671982
Entities
People
- A. I. Mlavsky
- B. N. Das
- C. B. Lamport
- E. A. Trickett
- G. A. Wolff