RADIATION STUDY ON MOS STRUCTURES,
Abstract
The effects of neutron irradiations on junction field-effect transistors have been studied both experimentally and theoretically. A computer program has been written to calculate JFET characteristics including the effects of carrier removal. It has demonstrated that calculated and experimental characteristics agree well both before irradiation, and after doses of up to 10 to the 15th power nvt. Devices have been fabricated with 10 to the 17th power/cc channel doping which show less than 15% change in I sub DSS or g sub m after 10 to the 15th power nvt thus demonstrating the feasibility of a JFET resistant to the permanent effects of nuclear as well as ionizing radiation. Drift tests on Li doped MOS capacitors and gate-controlled diodes have revealed gross instabilities with complicated time and voltage dependences. It is believed that the migration of Li(+) ions in the surface depletion region as well as in the oxide is involved. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1968
- Accession Number
- AD0672264
Entities
People
- A. R. Molozzi
- D. J. Fitzgerald
- E. H. Snow
- H-p. Albus
- S. F. Cagnina