RESEARCH ON DEFECT CONTROLLED ELECTRICAL PROPERTIES OF RUTILE.
Abstract
The electrical conductivity of single crystals of rutile (TiO2) was measured in the 'c' and 'a' directions over a temperature range 1000 degrees -1500 degrees C and from 1 to 10 the the -15th power atm of oxygen. The non-stoichiometric defect structure was rationalized on the basis of quasi-free electrons, both triply and quadruply ionized titanium interstitials, and acceptor impurities. A model based on the electrode blocking of titanium interstitials is proposed to explain the electrical transients observed below 1000 degrees C. An electron mobility of about 0.1 cm sq/volt-sec has been calculated by combining thermogravimetric and conductivity data above 1100 degrees C. A calculation of the cohesive energy of TiO2 using the Born-Mayer model indicates that the bonding in rutile is predominantly ionic. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0672281
Entities
People
- Robert N. Blumenthal
- Walter M. Hirthe
Organizations
- Marquette University