INVESTIGATION OF SEMICONDUCTOR SCHOTTKY BARRIERS FOR OPTICAL DETECTION AND CATHODIC EMISSION,
Abstract
The photoemissive quantum yield from Au-Si contacts is larger by at least a factor of 2 near the perimeter of the vacuum-evaporated Au pad than in its central region. This property promises the possibility of increased yield through control of the Au deposition process since it is unique to the initial Au-evaporated edge region and is not found for the perimeters of pads which are etched to decrease their size. Calculations of the properties of the optical impedance matching structure for Au-Ge contacts predict yield enhancements of up to 30-fold at 5 micrometers, and demonstrate that the spectral band width of enhanced yield can be adjusted by varying the thickness of the thin Au film. Processing procedures for Au-p-type-Si contacts are established. Infrared photoemission measuring equipment and associated cryostat apparatus are complete. A Ag-ZnSe vehicle has been developed for cathodic emission studies. Cathodic emission vacuum apparatus and measuring techniques are described and the results for emission from Cs-coated Ag-GaP contacts are reported and interpreted in terms of a simple model for the process. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1968
- Accession Number
- AD0672287
Entities
People
- Jerome Cohen
- Juri Vilms
- Robert J. Archer