ACCOMMODATION OF LATTICE MISMATCH AT HETEROJUNCTIONS.

Abstract

The accommodation of lattice mismatch at heterojunctions grown by back-melting and subsequent regrowth was investigated employing the InSb-GaSb system. Single crystals of either GaSb or InSb served as the one component (substrate) of the heterojunctions and the regrown part was an alloy of the general formula GaxIn1-xSb. The lattice mismatch at the heterojunction was varied by varying the composition of the regrown alloy. It was found that the accommodation of the lattice mismatch takes place by the generation of dislocations the number of which is consistent with a simple linear lattice model. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1968
Accession Number
AD0672555

Entities

People

  • A. F. Witt
  • H. C. Gatos
  • R. S. Mroczkowski

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Crystals
  • Demographic Cohorts
  • Dislocations
  • Heterojunctions
  • Single Crystals
  • Substrates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology