HEAT OF FORMATION OF SILICON CARBIDE AND PRODUCTS OF ITS EVAPORATION (TEPLOTA OBRAZOVANIYA KARBIDA KREMINYA I PRODUKTOV EGO ISPARENIYA)

Abstract

The study was undertaken in order to determine the heats of formation of SiC and products of its vaporization from vapor pressure data. Langmuir's method was used to determine the total vapor pressure over SiC and partial pressures of Si, Si2C and SiC2 at temperatures of 2113, 2193 and 2273K.

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Document Details

Document Type
Technical Report
Publication Date
Oct 13, 1967
Accession Number
AD0672698

Entities

People

  • B. F. Yudin
  • N. I. Voronin
  • N. L. Makarov

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boiling Point
  • Ceramic Materials
  • Chemistry
  • Heat Energy
  • Heat Of Combustion
  • Heat Of Formation
  • Heat Of Vaporization
  • Latent Heat
  • Materials
  • Measurement
  • Partial Pressure
  • Silicon Carbide
  • Standards
  • Thermodynamic Properties
  • Translations
  • Vapor Pressure
  • Vapors

Readers

  • Combustion science or combustion engineering.
  • Information Retrieval
  • Thin Film Deposition Science.