DISTRIBUTION OF IMPURITIES IN CRYSTALS AS A FUNCTION OF CONDITIONS OF THEIR GROWTH (RASPREDELENIE PRIMESEI V KRISTALLAKH V ZAVISIMOSTI OT USLOVII IKH ROSTA),
Abstract
Studies aimed at determining the degree of inhomogeneity in the distribution of a doping impurity with a distribution coefficient in excess of unity were carried out on Ge single crystals doped with Si and grown in three ways: stationary method by slow cooling, pulling by Czochralski's method, and pulling from a melt supplied with a solid ingot. In specimens grown by the stationary method of slow cooling at a cooling rate of 1.5 deg/hr, the ingots were found to be inhomogeneous along the length and cross section. A homogeneous ingot structure was obtained by using the method of supplying the melt. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 07, 1967
- Accession Number
- AD0672711
Entities
People
- M. G. Kekua
Organizations
- National Air and Space Intelligence Center