SOLID STATE RESEARCH, 1968:2
Abstract
Contents: Photovoltaic detectors of Pb(1-x)Sn(x)Te; Photoconductivity in single-crystal Pb(1-x)Sn(x)Te; Long wavelength infrared Pb(1-x)Sn(x)Te diode lasers; Far-infrared photoconductivity in high-purity epitaxial GaAs; Isolation of junction devices in GaAs using proton radiation damage; Short Wavelength response characteristics of InSb-MOS photovoltaic detectors; 100-watt CO2 amplifier; Stable laser oscillator, design and testing; Thermal blooming; Optical heterodyne detection at 10.6 millimicrons of the beat frequency between a tunable Pb0.88Sn0.12Te diode laser and a CO2 gas laser; Boundary layer analysis of forced convection crystal growth; Optical transmission of Cd(1-x)Mg(x)Te alloys; Photoluminescence due to oxygen in ZnTe alloys; Composition- and pressure-induced structural changes in the Ba(1-x)Sr(x) RuO3 system; Determination of experimental form factors on an absolute scale from relative x-ray intensities; Electronic band structure; magnetism; Laser scattering and nonlinear effects.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1968
- Accession Number
- AD0672961
Entities
People
- Alan L. McWhorter
Organizations
- Massachusetts Institute of Technology