INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.

Abstract

Studies are being made of the alloy system indium arsenide-phosphide (InAs-InP) to produce injection lasers which emit at 1.06 microns at room temperature. Ingots of InAs-InP were grown using both the Czochralski magnetic puller and a modified Czochralski technique in which the crystal is pulled from a melt encapsulated in boron oxide glass. Both methods show promising results, and crystals of InAs-InP were produced which have made possible the postulation of a revised phase diagram for the system. Both lattice parameters and electron carrier concentration and mobility data were obtained for the materials produced. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1968
Accession Number
AD0673318

Entities

People

  • Bernd Ross
  • James H. Winkler
  • Robert K. Willardson

Tags

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Compounds
  • Compound Semiconductors
  • Diagrams
  • Electronics
  • Electrons
  • Glass
  • Materials
  • Mobility
  • Phase
  • Phase Diagrams
  • Semiconductors
  • Silica Glass
  • Solid State Electronics
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene