MATHEMATICAL SIMULATION OF THE EFFECTS OF IONIZING RADIATION ON SEMICONDUCTORS,
Abstract
The report outlines the results of four mathematical investigations initiated during the present contract period: the high-low semiconductor junction, the junction field-effect transistor, the measurement of impurity atom distributions by differential capacitance techniques, and the electrical properties of a diffused semiconductor resistor. Two of these investigations remain incomplete; therefore, the information presented here constitutes a status report for these projects. The remaining two projects have been completed, and the information presented here summarizes all final conclusions derived from these mathematical investigations. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0673367
Entities
People
- David P. Kennedy
Organizations
- International Business Machines Corporation (Armonk, NY)