PHONON DRAG IN INDIUM AND GALLIUM ANTIMONIDES (FONONNOE UVLECHENIE V ANTIMONIDAKH INDIYA I GALLIYA),
Abstract
Measurements of the transverse and longitudinal Nernst-Ettinghausen (N.-E.) effect were carried out for p-InSb and p-GaSb with different impurity contents at 20-300K, in magnetic fields of < or = 26,000 oe. In all GaSb samples the N.-E. effect has a negative sign and the N.-E. field increases rapidly as the temp. is lowered. It is suggested that below 50K, the Rutherford mechanism of scattering of current carriers prevails. At < 100K, in sufficiently pure InSb and GaSb samples the phonon-drag effect predominates in thermomagnetic and thermoelectric effects. It is also suggested that in both GaSb and InSb the charge transfer is accomplished by 2 types of holes: heavy and light ones. The effect of phonon drag is connected with the heavy holes. The valence zones of both InSb and GaSb are doubly degenerate at k = 0. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 03, 1967
- Accession Number
- AD0673685
Entities
People
- D. Kh. Amirkhanova
- R. I. Bashirov
Organizations
- National Air and Space Intelligence Center