THE VELOCITY OF DISLOCATIONS IN SILICON CRYSTALS,

Abstract

The chemical etching method was used to reveal the dislocations produced by indentation on silicon single crystal specimens. Edge (or 60 degree) dislocation velocities are measured under different shear stresses and at different temperatures (700-900 degrees C). By assuming that the motion is thermally activated the corresponding activation energy is found to be about 2.94 eV. The velocities of edge dislocations and screw dislocations at 900 degrees C are compared, the latter being smaller. Measurements of dislocation velocities on different specimens show the retarding effect of as-grown dislocations. Dislocation multiplication is observed from as-grown dislocations from grain boundaries. Dislocation velocities in process of multiplication are measured. Certain factors affecting the measured values of dislocation velocities are discussed.

Document Details

Document Type
Technical Report
Publication Date
Nov 03, 1967
Accession Number
AD0673845

Entities

People

  • Hung Ching
  • Yeh I-cheng

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Boundaries
  • Chemical Etching
  • Crystals
  • Dislocations
  • Energy
  • Etching
  • Grain Boundaries
  • Heat Of Activation
  • Measurement
  • Republic
  • Shear Stresses
  • Single Crystals
  • Stresses

Readers

  • Materials Science and Engineering.