STUDY OF OPTICAL INTERACTIONS IN SOLIDS
Abstract
Multiphoton absorption in semiconductors was investigated with emphasis on the III-V compounds. It was shown that this mechanism can set an intrinsic upper limit to the power density transmittible through semiconductors. This mechanism is an effective means of optically pumping semiconductor lasers, can limit the power density obtainable from such devices, or can enable the fashioning of nonlinear optical elements. Laser action in a large volume of Ga As was excited by double-photon pumping using a Q-switched neodymium laser, yielding output power of the order of a megawatt/sq cm at 8365 A at liquid nitrogen temperature. A new temperature anomaly of the threshold for stimulated Raman emission in liquid benzene was discovered and investigated. This effect indicates that self-focusing of the exciting laser beam does not explain previously observed Raman thresholds.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1968
- Accession Number
- AD0673983
Entities
People
- J. P. Biscar
- M. Welkowsky
- R. Braunstein
- S. Gratch
Organizations
- University of California, Los Angeles