HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.

Abstract

Processing of hafnium and hafnium-dioxide thin-film components is described. Batch anodization techniques are outlined which were used to form resistors and capacitors suitable for microcircuit work on silicon with pattern line widths as narrow as 0.5 mil. Resistance values exceeding 30,000 ohms/sq were achieved and stability data on hafnium thin-film resistors is presented. Temperature coefficient of resistance (TCR) vs sheet resistivity curves have been plotted for resistors fabricated on both glass and glazed alumina substrates. Temperature coefficient of capacitance (TCC) values ranging from +300 to +400 ppm/C have been noted for hafnium-dioxide capacitors. The temperature coefficient of dissipation (TCD) for these elements is in the order of +1%/C. From the measurements obtained, a dielectric constant of 36 was calculated for hafnium-dioxide. Attempts of fabricating a complete circuit employing an 'all hafnium' technology is described. Problems encountered with multilayer sputtering are noted and evaluated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1968
Accession Number
AD0674216

Entities

People

  • Joseph M. Mitchell
  • Morton L. Topfer
  • Robert L. Schelhorn

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Coefficients
  • Dielectric Permittivity
  • Electrical Resistance
  • Film Resistors
  • Films
  • Microcircuits
  • Resistance
  • Resistors
  • Temperature Coefficients
  • Thin Film Resistors
  • Thin Films

Readers

  • Electrical Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene