MEASUREMENT OF CARRIER LIFETIME IN SEMICONDUCTORS - AN ANNOTATED BIBLIOGRAPHY COVERING THE PERIOD 1949-1967.
Abstract
About 300 papers concerned with the measurement and interpretation of carrier lifetime in semiconductors are listed together with key words and a brief comment for each. Eight types of papers are included: Description of Methods, Analysis of Results, Standard Methods, Experimental Results, Theoretical Models, Auxiliary Procedures and Data, Reviews, and Books. Emphasis is placed on methods of carrying out measurements of carrier lifetime. Hence complete coverage was attempted and nearly two thirds of the entries appear in the first three categories. A large fraction of the papers listed describe the photoconductivity or photoconductive decay methods. The other most popular methods are based on diode characteristics or the photomagnetoelectric effect. In all, 35 methods for measuring carrier lifetime are represented by entries. In addition, representative papers which describe various models for recombination are included together with a number of papers which discuss the influence of surface recombination and trapping phenomena. Auxiliary procedures such as surface preparation, formation of ohmic contacts, control of temperature, and the like are described in some of the entries. Two indexes: a Key Word Index and an Author Index, are provided together with a classification of the various methods for measuring carrier lifetime. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1968
- Accession Number
- AD0674627
Entities
People
- W. Murray Bullis
Organizations
- National Institute of Standards and Technology