INVESTIGATION OF RADIATION HARDENED CIRCUIT ELEMENTS,

Abstract

This is the fourth scientific report on the investigation of radiation hardened insulated gate field effect devices. A very thin, dielectric isolation bounded volume of single crystal silicon is used in constructing an insulated gate field effect transistor. Radiation testing of these devices has been achieved using a neodymium doped glass rod laser, a linear accelerator of electrons (a Linac), and a flash X-ray facility, with the emphasis on the transient radiation effects. Permanent effects, particularly the shift in threshold voltage values, were also monitored. A comparison of bounded volume metal-oxide-silicon transistors (BVM) with conventionally constructed metal-oxide-silicon transistors (MOS) has shown that the BVM is at least an order of magnitude harder than the conventional MOS using peak photo current as the criteria. The threshold shifts are similar for a given absorbed dose. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1968
Accession Number
AD0674632

Entities

People

  • Larry Scott

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Field Effect Transistors
  • Ionizing Radiation
  • Linear Accelerators
  • Metal Oxides
  • Metals
  • Oxides
  • Radiation
  • Radiation Effects
  • Single Crystals
  • Transistors
  • X Rays

Fields of Study

  • Physics

Readers

  • Aerospace Test and Evaluation
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics