ETCHING AND REGROWTH OF CUPROUS CHLORIDE,
Abstract
Partial dissolution in hydrochloric acid followed by gentle rinsing in water allowed individual grains and twins in cuprous chloride to be distinguished easily with the naked eye. It was found that regrowth occurred during rinsing because of dissociation of the soluble CuCl2(-) complex. This regrowth resulted in the formation of a shingled surface which served to reflect light quite differently from different grain orientations. Polished surfaces were found to result from etching with 50:50 nitric acid-water for times up to 30 sec at room temperature. Dislocation etch pits were revealed by placing cuprous chloride in hydrochloric acid for times up to 5 sec followed by spraying with acetone. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1968
- Accession Number
- AD0674757
Entities
People
- Armond B. Chase
- James R. Teviotdale
- William R. Wilcox
Organizations
- The Aerospace Corporation