ON THE THEORY OF OPTICAL ABSORPTION IN CRYSTALS PLACED IN AN OUTER FIELD (K TEORII OPTICHESKOGO POGLOSHCHENIYA V KRISTALLAKH, POMESHCHENNYKH VO VNESHNIE POLYA),
Abstract
The question of light absorption by semiconductors placed in external parallel electrical and magnetic fields in the area of the edge of the main absorption band (direct transitions) is considered. General equations for the absorption coefficient for permissible and forbidden transitions are derived for use in obtaining known formulas for the absorption coefficient in the absence of external fields, as well as for the electrooptical and magnetoabsorption effects. It is shown that in a weak electrical field (with the quantized magnetic field conserved) the absorption coefficient can be presented in the form of three members, one of which coincides exactly with the absorption coefficient for light when there are no external fields, while the other two are oscillating in nature, depending on the energy of the photon when electrical and magnetic fields are constant.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 06, 1967
- Accession Number
- AD0675868
Entities
People
- Ya. A. Rozneritsa
Organizations
- National Air and Space Intelligence Center