THE USE OF P-N JUNCTION SEMICONDUCTOR RADIATION SOURCES IN PHASE OPTICAL RANGING SYSTEMS,

Abstract

The report describes studies concerning the modulation phase distribution along the p-n junction in GaAs and GaAsxP1-x incoherent radiation sources and the intensity of such radiation, with a view to creating high-precision optical ranging systems.

Document Details

Document Type
Technical Report
Publication Date
Jan 05, 1968
Accession Number
AD0676165

Entities

People

  • B. I. Utenkov
  • V. I. Kalinin
  • Yu. V. Popov

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Extrinsic Semiconductors
  • Intensity
  • Modulation
  • P-N Junctions
  • Precision
  • Radiation
  • Range Finding
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Space/Atmospheric Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics