CARRIER SCATTERING FROM DEFECTS IN NEUTRON-BOMBARDED SEMICONDUCTORS,

Abstract

Recent experimental evidence for the clustering of defects in neutron-irradiated semiconductors has led to a revived interest in the model proposed by Gossick. This paper presents some theoretical extensions of Gossick's model, in which a simple defect model is used to describe some structure-sensitive properties. Poisson's equation and equations for carrier density have been solved for the model in the depletion approximation. The carrier-scattering mobility has been calculated from the Born approximation for scattering and the potential derived from Poisson's equation, and the results of the calculation are compared with some experiments. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 16, 1968
Accession Number
AD0676356

Entities

People

  • T. M. Flanagan

Tags

DTIC Thesaurus Topics

  • Born Approximations
  • Clustering
  • Compound Semiconductors
  • Electronics
  • Equations
  • Mobility
  • Radiation
  • Radiation Effects
  • Scattering
  • Semiconductors
  • Solid State Electronics

Readers

  • Calculus or Mathematical Analysis
  • Materials Science and Engineering.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics