USING ACID-RESISTANT PHOTOSENSITIVE EMULSIONS TO OBTAIN LOCAL INHOMOGENEITIES WITH A HIGH RESOLVING POWER ON MONOCRYSTALS AND FILMS OF GERMANIUM AND SILICON (PRIMENENIE KISLOTOSTOYKHIKH SVETOCHUVSTVITELNYKH EMULSII DLYA POLUCHENIYA LOKALNYKH NEODNORODNOSTEI S VYSOKIM RAZRESHENIEM NA MONOKRISTALLAKH I PLENKAKH GERMANIYA I KREMNIYA),
Abstract
Photosensitive acid-resisting emulsions for use in photoengraving of semiconductor parts and semiconductor surfaces were synthesized and tested. Etching agents were prepared for use on germanium and silicon, films of germanium and silicon, silicon oxides, and gallium arsenide single crystals. Sensitizers that increase the sensitivity of the emulsions to ultraviolet light are indicated. Over 20 preparations--including natural colloids, organosilicon compounds, cinnamic aldehyde, emulsions based on azo and diazo compounds and polymeric polyesters--were tested. The photoengraving method consists of preparation of surfaces, application of emulsion, exposure, development, heat tanning, ultraviolet tanning, etching, and washing and drying. It was found that the esters of polystyrene and cinnamic acid, polyvinyl alcohol, and cinnamic acid have high dielectric characteristics that change negligibly with time. It was also found that some of the resins that were synthesized are universal for photoengraving emulsions for the above-mentioned semiconductor materials. The sensitized emulsions that were used retained their ability to be tanned by ultraviolet rays for several months. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 03, 1967
- Accession Number
- AD0676533
Entities
People
- S. D. Bondarenko
- Yu. I. Fedorov
Organizations
- National Air and Space Intelligence Center