CONCENTRATION DEPENDENT INTERDIFFUSION IN THE LEAD CHALCOGENIDES.

Abstract

The depth of p-n junctions in the lead chalcogenides has been calculated by using different diffusion coefficients for the n and p-type material in solving the interdiffusion problem. The solutions to the diffusion equation using a step-function model have been obtained for two cases of one-dimensional geometry; the semi-infinite solid and the slab of finite thickness. The results are useful in predicting the movement of p-n junctions, in determining the equilibration time required for obtaining homogeneous material and in predicting concentration profiles. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1968
Accession Number
AD0676910

Entities

People

  • Robert William Brodersen

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Coefficients
  • Diffusion
  • Diffusion Coefficient
  • Equations
  • Geometry
  • Materials
  • Mathematics
  • P-N Junctions
  • Step Functions
  • Thickness

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.