CHEMICAL DYNAMICS ON CRYSTAL SURFACES.
Abstract
Molecular beam studies with hydrogen have uncovered a mechanism for promoting the interaction with a semiconductor surface through stimulation of the gas stream alone. Field emission observations of an atomically smooth f.c.c. metal have been carried out. These reveal a pronounced structural specificity for inert gases--rough, index planes are preferred both in van der Waal's and in weak chemical interactions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1968
- Accession Number
- AD0677302
Entities
People
- Gert Ehrlich
Organizations
- General Electric