INVESTIGATION OF P-JUNCTIONS PRODUCED ON THE BASIS OF SILICON CARBIDE ALLOYED WITH BERYLLIUM,

Abstract

Electroluminescent p-n-junctions based on p-SiC(Be), prepared by various methods, are described. Volt-ampere, volt-capacitive, and spectral characteristics of the p-n-junctions are presented. Satisfactory rectifying properties were obtained from grown p-n-junctions in the plane perpendicular to axis c. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 19, 1967
Accession Number
AD0678302

Entities

People

  • A. A. Kalnin
  • D. A. Yaskov
  • V. V. Pasynkov
  • Yu. M. Tairoy

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Beryllium
  • Carbides
  • Compound Semiconductors
  • Elements
  • Group 14 Elements
  • Metalloids
  • Semiconductors
  • Silicon
  • Silicon Carbide

Readers

  • Aerodynamics/Aeronautics.
  • Semiconductor Device Technology