EXPERIMENTAL INVESTIGATION OF THE PERMANENT EFFECTS OF RF RADIATION IN X-BAND ON ELECTRONIC COMPONENTS
Abstract
An experimental investigation was conducted at X-band frequencies to determine the effects of rf radiation on composition resistors, crystal diodes, transistors, and metal oxide silicon field-effect transistors (MOSFET). To obtain maximum power transfer, the component leads were cut and bent to form a half-wave dipole tuned to the excitation frequency. The component was placed in a microwave assembly, oriented parallel to the electric field, and exposed for several minutes until thermal equilibrium was established. Data concerning permanent changes in the electrical characteristics of the components as a function of exposure to the E-field were obtained. Measurements were taken of the temperature rise of the components while various types of convection and forced-air cooling were employed. These measurements indicate that the changes in the electrical characteristics of the components are primarily a function only of the temperature rise produced in the component and only secondarily if at all, a function of the field intensity per se.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1968
- Accession Number
- AD0678559
Entities
People
- Nikolai Tschursin
Organizations
- Harry Diamond Laboratories