AN INVESTIGATION OF THE RECOMBINATION RADIATION FROM p-n JUNCTIONS IN GALLIUM ANTIMONIDE,
Abstract
The specific features of carrier, injection-generated electroluminescence of gallium antimonide, alloyed and diffused p-n junctions, biased in the forward direction, are studied. GaSb p-type diodes were made by alloying 99% Pb + 1% Te and 99% Sn + 1% Te beads at 400C into p-type GaSb crystal, with a hole concentration of 1.5 x 10 to the 17th power hole/cu cm. The n-type GaSb junctions were made by the diffusion of Zn at 580C. The n-type material was doped with Te, with a resulting electron concentration and mobility of 2.4 x 10 to the 17th power el/cu cm and 2700 sq cm/v sec, respectively. Diodes were tested using 2 microsec pulses, with a frequency of 40 Hz. Radiation was detected by means of lead sulfide photoresistors. The results show that alloyed junction diode radiation is confined to a narrow spectrum centered at 0.760 plus or minus 0.005 eV with a halfwidth of 0.02 eV. However, the recombination radiation spectrum of diffused p-n junction depends on the applied current density. When the current density is relatively small, one peak at 0.73-0.74 eV is observed. One order of magnitude increase in current density causes a second peak to appear at 0.756 plus or minus 0.005 eV, and when the current density reaches 60,000 amp/cu cm, the spectrum contains one intense peak at 0.787 plus or minus 0.005 eV. The recombination of injected carriers takes place at identical levels located near the valence zone. However, the reason for the observed narrowing of the spectrum could not be established.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 08, 1968
- Accession Number
- AD0678788
Entities
People
- I. V. Kryukova
- L. I. Paduchikh
Organizations
- National Air and Space Intelligence Center