GROWTH, PROCESSING AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,

Abstract

Epitaxial vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substrates. Etching and thin film metallizing procedures were developed for silicon carbide, a chlorine-oxygen gas etch at 900 degrees C being used. Specific surface characteristics of solution-grown crystals, epitaxial crystals, and crystals etched in various fluids were correlated with crystal polarity. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1968
Accession Number
AD0678880

Entities

People

  • M. Barlow
  • R. A. Mueller
  • R. W. Bartlett

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chlorine
  • Compound Semiconductors
  • Crystals
  • Elements
  • Films
  • Metallizing
  • Polarity
  • Silicon
  • Silicon Carbide
  • Single Crystals
  • Substrates
  • Thin Films
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.