EFFECTIVE CROSS SECTIONS OF THE FORMATION OF DEFECTS IN GaAs UNDER THE EFFECT OF GAMMA-RAYS,

Abstract

The work calculates the theoretical values of the effective cross sections of defect formation for Ga and As in GaAs under the effect of gamma-rays. Certain experimental results are introduced for the effective cross sections in p-GaAs for the fine level 0.05 eV from the top of the valence band. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 18, 1968
Accession Number
AD0679512

Entities

People

  • M. A. Krivov
  • S. V. Malyanov

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Energy Bands
  • Gamma Rays
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.