REGENERATIVE SEMICONDUCTOR PARAMETRIC AMPLIFIERS (CERTAIN QUESTIONS OF THEORY AND CALCULATION),
Abstract
The monograph covers the theory of regenerative semiconductor parametric amplifiers developed on the basis of the theory of linear circuits. Processes occurring in the parametric amplifier, represented in the form of a variable capacitor with a linear circuit connected to it, are analyzed. Expressions are derived for gain, internal noise temperature, bandwidth (with and without band-expanding filters), and optimum relationships between parameters of amplifier for which bandwidth is maximum and noise temperature is minimum are found. Different methods of tuning such amplifiers are examined. Also treated are instability of phase and frequency characteristics of the parametric amplifier, operational features of multifrequency amplifiers, and questions of electrodynamic analysis and selection of parameters of such amplifiers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 15, 1967
- Accession Number
- AD0679562
Entities
People
- G. I. Slobodenyuk
- V. I. Trifonov
- V. N. Vasilev
- Yu. L. Khotuntsev
Organizations
- National Air and Space Intelligence Center