INVESTIGATION OF RADIATION EFFECTS IN SEMICONDUCTORS,
Abstract
The program consists of two tasks and involves the investigation of fast-neutron radiation effects in semiconductor devices. Objectives of Task I are to determine bulk, epitaxial, and diffused-layer neutron-damage constants in silicon and to correlate them with device parameters. This report describes the pre-irradiation measurement of substrate impurity concentrations using MOS-CV and four-point probe structures fabricated on the same silicon chip. Task II objectives are the correlations of neutron degradation of h sub FE with physical device constants and damage mechanisms. The pre-irradiation characteristics of the bipolar transistor, the tetrode and the transistor with a field-plate over the emitter-base junction are presented and discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1968
- Accession Number
- AD0679634
Entities
People
- James G. Aiken
- James S. Crabbe
- Martin G. Buehler
- Walter T. Matzen
Organizations
- Texas Instruments