INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.
Abstract
The indium arsenide-phosphide alloy system has been studied. The compound InP was prepared by directional freezing, and from Hall effect measurements the segregation coefficients for S, Se, Te, Sn and Zn were derived, as well as the variation of electron mobility with carrier concentration over the range from 2 x 10 to the 16th power to 3 x 10 to the 19th power/cc. Ingots of the alloys have been grown by the Czochralski and liquid encapsulation (B2O3) techniques; these were polycrystalline but with large grains. Lattice parameters were obtained by X-ray powder photography, and a phase diagram constructed. Carrier concentrations and mobilities were obtained from Hall effect measurements. The preparation of laser diodes was studied by investigating diffusion, contact problems and Fabry-Perot cavity fabrication. Stimulated light emission was observed, with thresholds as low as 2000 A/sq cm at 77K and lasing up to 150K. A wavelength of 1.060 microns was achieved from lasing diodes by adjusting the alloy composition, fine tuning being accomplished by a small temperature adjustment. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1968
- Accession Number
- AD0679908
Entities
People
- Alan G. Thompson
- Bernd Ross
- Robert K. Willardson