MATHEMATICAL SIMULATION OF THE EFFECTS OF IONIZING RADIATION ON SEMICONDUCTORS,
Abstract
A method is shown whereby differential capacitance measurements can be used to establish the impurity atom distribution in a semiconductor. Unlike previously published information on this topic, the method presented here is applicable to the measurement of semiconductor material containing a significant electrostatic charge. Illustrations are given of the differential capacitance inferred impurity profiles in the vicinity of abrupt and linearly-graded high-low junctions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1968
- Accession Number
- AD0680001
Entities
People
- David P. Kennedy
Organizations
- International Business Machines Corporation (Armonk, NY)