VAPOR-SOLVENT GROWTH OF SEMICONDUCTING CRYSTALS.
Abstract
The report describes the accomplishments of the research effort that was aimed at improving the fundamental understanding of the mechanisms of crystal growth from the vapor phase by way of one or several chemical transport reactions. The results of studies of equilibrium, vapor-transport and surface characteristics in the systems Ge-1, Ge-Br, Ge-Ga-I, Si-H-Cl, Ge/GaAs and Si/Si are described. Lists of publications, oral presentations and patent disclosures originated by the contract-supported work are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0680049
Entities
People
- Franco P. Jona
Organizations
- IBM Thomas J. Watson Research Center