DETERMINATION OF OXYGEN CONTENT IN GERMANIUM AND SILICON BY He3 ION ACTIVATION,
Abstract
In connection with the necessity of selecting a material suitable for the manufacture of spectrometric nuclear radiation detectors, a technique has been developed for oxygen determination in germanium and silicon by He3 ion bombardment. The possibility of analysis of gallium arsenide, tungsten, silicon carbide, and other materials is demonstrated. The sensitivity of the method is 0.0000007 percent. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1968
- Accession Number
- AD0680364
Entities
People
- A. M. Demidov
- G. A. Kotelnikov
- G. I. Aleksandrova
- G. P. Pleshakova
- G. V. Sukhov