SELECTED TOPICS IN THE THEORY OF ATOMIC SPECTRA.

Abstract

The numerical procedure is outlined. The theoretical ionization potentials, term and level energies in SLJM and intermediate coupling scheme, for the five lowest lying configurations of silicon, phosphorus and sulfur isoelectronic sequences are calculated using non-relativistic Hartree-Fock-Slater basis sets. In the process of evaluation different interactions are added one at a time to give an idea of their effects. At each step the theoretical results are compared with the observed ones. To exhibit the mixing of terms or levels for typical cases the 'mixing coefficients,' as defined in the text, are tabulated. In the beryllium isoelectronic sequence, with the exception of Be I and B II, the observations show that the 2s3p (3)P term lies higher than 2s3p (1)P term, contrary to the theoretical expectation. This fact is explained by configuration mixing. Other configuration mixing calculations are carried out for the 3p4p (3)D, (3)P, (3)S, (1)D, (1)P and (1)S terms in the silicon isoelectronic sequence. The behavior of line strengths in the extreme mixing of the levels due to spin-orbit interaction is shown by calculating intermediate coupling line strengths for 3s-3p and 3p-3d transitions in the carbon isoelectronic sequence. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 15, 1968
Accession Number
AD0680470

Entities

People

  • H. Odabasi

Organizations

  • JILA

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Atomic Spectra
  • Beryllium
  • Coefficients
  • Couplings
  • Ionization
  • Ionization Potentials
  • Observation
  • Phosphorus
  • Physical Properties
  • Quantum Properties
  • Sequences
  • Spectra
  • Spin-Orbit Interaction
  • Test And Evaluation
  • Transitions

Fields of Study

  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Space