PIEZO-ABSORPTION IN GERMANIUM.

Abstract

The measurements of the piezo-absorption in the absorption edge region for germanium and silicon was concluded. A theoretical calculation of the matrix elements for these indirect transitions at the center of the Brillouin Zone in silicon was published in the Physical Review. The feasibility of using infrared absorption in the free carrier region of germanium to determine the relative electron population in the various valleys in n-germanium under uniaxial stress was demonstrated. The equipment for measuring the 'warm' electron coefficient in germanium for arsenic doped n-Ge was assembled. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 19, 1968
Accession Number
AD0680861

Entities

People

  • Erich Erlbach

Organizations

  • City College of New York

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Brillouin Zones
  • Coefficients
  • Electrons
  • Elements
  • Germanium
  • Measurement
  • Transitions

Readers

  • Electrical Engineering
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics