THERMAL CONDUCTIVITY OF GERMANIUM STRONGLY ALLOYED WITH ARSENIC AND GALLIUM,
Abstract
A study was made of the effect of alloying germanium with donor and acceptor impurities in a wide range of concentrations with an aim at ascertaining the influence of the degree of doping. The impurity concentrations ranged from 1.4 x 10 to the 14th power to 10 to the 20th power/cu cm and the tests were made in the temperature range 100-500K. The samples were single crystals grown by the Czochralski method under conditions ensuring homogeneity of the samples, and cut in the form of parallelepipeds measuring 4 x 5 x 12 mm. The thermal conductivity was measured by a stationary method in a vacuum of the order of 0.001 mm Hg. Tests at 300K have shown that, up to 10 to the 17th power/cu cm, the thermal conductivity of germanium depends neither on the amount or the type of the doping impurity, exhibiting a plateau at a value 0.60 W/cm-deg. A higher concentrations, the thermal conductivity drops to 0.471 W/cm-deg for an arsenic content 5.45 x 10 to the 19th power/cu cm, and to 0.53 W/cm-deg for germanium containing 1 x 10 to the 20th power/cu cm of gallium. The temperature dependence of the strongly doped germanium is linear, whereas in the case of weak doping the growth of thermal resistance begins to exhibit a decrease. In purer samples k approximately T to the minus 0.23 power at T > 300K and k approximately T to the minus 1.15 power < 300K. The fact that the thermal conductivity is proportional to the reciprocal of the temperature offers evidence of the dominating role of three-phonon processes. Deviations from this proportionality is attributed to the appearance of photon thermal conductivity.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1968
- Accession Number
- AD0680925
Entities
People
- D. G. Arasly
- M. I. Aliev
- V. I. Fistul'
Organizations
- National Air and Space Intelligence Center