SEMICONDUCTOR HETEROJUNCTION STRUCTURE STUDIES.

Abstract

Single crystal ZnSe has been grown on Ge substrates by a close-spaced HCL transport process. Feasibility studies have been made of such semiconductor heterojunction structures and confirm that wide-gap emitter action is practical. Transistors of n-type ZnSe emitters on pGe-nGe base-collector structures have usuable current gains even though the emitter doping levels (10 to the 13th power donors/cu cm) are many orders of magnitude lower than the base doping levels (10 to the 19th power acceptors/cu cm). Effects on the current gain of parameters such as doping levels, base widths, current injection levels and temperature have been studied. Because of the low emitter doping levels, the emitter current flow is space-charge limited. Further study of this heterojunction pair is needed to determine its optical quantum efficiency, performance as a phototransistor and performance as a high frequency transistor. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1968
Accession Number
AD0681173

Entities

People

  • Arthur G. Milnes
  • Donald L. Feucht

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Efficiency
  • Feasibility Studies
  • Frequency
  • Heterojunctions
  • Phototransistors
  • Quantum Efficiency
  • Semiconductor Devices
  • Semiconductors
  • Single Crystals
  • Space Charge
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Space
  • Space - Hall-Effect Thruster