THE EFFECT OF X-RAY AND ELECTRON RADIATION ON GaAs p-n JUNCTIONS,
Abstract
A study was made of the effect of x-ray and electron emission on the volt-ampere characteristics of gallium arsenide p-n junctions with the initial concentration of the current carriers of 4 x 10 to the 15th power/cc and a mobility of 3500 sq cm/V sec. The irradiation of the p-n junctions was accomplished using x-rays and electrons with energies of 90 KeV and 6.5 MeV respectively. On the basis of the results obtained, the following was established: (1) forward and reverse currents in p-n junctions are increased owing to the appearance of nonequilibrium current carriers during x-ray irradiation. Because of imperfections in gallium arsenide crystals, the rate of the recombination of current carriers was sufficiently high, and the observed changes of characteristics during irradiation were much smaller than changes during the irradiation of germanium and silicon diodes. The rectification factor of p-n junctions during irradiation varies by as much as 40% of the initial value; (2) the reverse current of p-n junction irradiated by electrons increase sharply in the prebreakdown voltage regions, and the breakdown voltage is decreased. This reverse branch of the characteristic can be explained by the development of radiation defects in the region of the p-n junction. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 03, 1968
- Accession Number
- AD0681256
Entities
People
- M. A. Krivov
- S. V. Malyanov
Organizations
- National Air and Space Intelligence Center