METHODS OF MEASUREMENT FOR SEMICONDUCTOR MATERIALS, PROCESS CONTROL, AND DEVICES.
Abstract
The report describes NBS activities relating to: measurement of resistivity, carrier lifetime, inhomogeneities, and Hall effect in semiconductor crystals; study of infrared measurement methods, properties of deep-lying impurities (in InSb), and high field effects; establishment of a processing facility; evaluation of wire bonds; review of NASA measurement methods; and measurement of second breakdown in transistors, thermal properties of devices, and noise in microwave diodes. Projects on silicon nuclear radiation detectors and specification of germanium are also described. Supplementary data concerning staff, committee activities, technical and information services, and publications are included as appendixes. A list of ASTM Standards relevant to integrated circuit processing is also included. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1968
- Accession Number
- AD0681330
Entities
People
- W. Murray Bullis
Organizations
- National Institute of Standards and Technology