TEMPERATURE DEPENDENCE OF THE RESISTIVITY AND HALL EFFECT OF THIN CdS FILMS,
Abstract
A system was set up to study the resistivity and Hall mobility in thin semiconductor films as a function of temperature. For vacuum deposited CdS films exhibiting photoluminescence resistivity data were taken for the temperature range from 77K to 400K, while the Hall mobility was measured between 300K and 400K. A plot of the resistivity data showed an exponential variation with temperatures from 250K to 400K. From theoretical considerations, it was inferred that the donor levels were not discrete within the energy bandgap. No systematic variation of the resistivity was observed at temperatures between 77K and 200K. The resistivities of the samples varied over a wide range from 1 ohm-cm to 10 to the 7th power ohm-cm at 300K. The Hall mobility data for the CdS films showed mobilities between one and two sq cm/V-sec, and also a consistent exponential variation with temperature. The measured values of the mobility and its exponential behavior were in good agreement with reported values for CdS films. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1968
- Accession Number
- AD0681719
Entities
People
- Ricardo Jimenez
Organizations
- University of Illinois Urbana–Champaign