THE CHLORINE ETCHING OF SINGLE CRYSTAL SILICON,
Abstract
The feasibility of using chlorine gas to etch silicon surfaces was demonstrated. The effect of illumination and temperature on the reaction was studied. Optimum results were obtained when the silicon was heated to 450C and illuminated with a high pressure mercury lamp. Current theories of etching both by acid solution and halogen vapor are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 13, 1961
- Accession Number
- AD0681798
Entities
People
- C. E. Baker
- G. J. Goble
Organizations
- General Dynamics