SUPPRESSION OF THE SEMICONDUCTOR-METAL TRANSITION IN VANADIUM OXIDES.

Abstract

V2O3 and V2O4 films have been sputtered by a radio-frequency technique onto relatively cold substrates. The films were amorphous according to x-ray diffraction. Their electrical resistivities at-100C corresponded to that of the respective high temperature phases of the crystals. However, unlike the crystalline solids, the amorphous films did not exhibit the so-called semiconductor-metal transition. At 25C, because of the absence of this transition, the conductivity of amorphous V2O4 is almost four orders of magnitude greater than that of the crystal. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1968
Accession Number
AD0681874

Entities

People

  • J. D. Mackenzie
  • T. N. Kennedy

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conductivity
  • Diffraction
  • Electronics
  • Frequency
  • High Temperature
  • Metals
  • Physical Properties
  • Radio Frequency
  • Semiconductors
  • Solid State Electronics
  • Substrates
  • Transitions
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene