AN EXPLORATION OF THE POTENTIAL OF P-N JUNCTION DEVICES FOR TRANSDUCER APPLICATIONS.

Abstract

The purpose of the project was to explore the potential of pn junction devices for transducer applications. In particular, the aim was to generate information that could be used to assess whether this new transducer concept can advance the present state of transducer technology. We have used transistors as sensing elements because of the built-in amplification and a linear relationship that exists between bias voltage V sub CE and pressure. The linear range can be controlled. For transducer action, the stress is applied to the transistor by means of a sharp sapphire indenter. Transistor transducers are characterized by very high sensitivity, excellent frequency response, from dc into the MHz range, and small size. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1969
Accession Number
AD0682204

Entities

People

  • C. K. Kuo
  • L. H. Glassman
  • M. E. Sikorski
  • R. P. Woodward

Organizations

  • Georgia Tech

Tags

DTIC Thesaurus Topics

  • Amplification
  • Electronic Equipment
  • Electronics
  • Frequency
  • Frequency Response
  • P-N Junctions
  • Sapphire
  • Semiconductor Devices
  • Sensitivity
  • Solid State Electronics
  • Transducers
  • Transistors

Readers

  • Fluid Dynamics.
  • Integrated Circuit Design and Technology.
  • Mechanical Engineering/Mechanics of Materials.